This document describes the features and characteristics of the BFG67 series NPN 8 GHz wideband transistors, including high power gain, low noise figure, high transition frequency, and excellent reliability due to gold metallization. These products are suitable for wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment.
The document is a product specification sheet for the Philips BFG67 series of discrete semiconductors. These are NPN silicon transistors designed for high power gain and low noise figure in wideband applications within the GHz range, such as satellite TV tuners and portable RF communications equipment.
| Collector-emitter voltage (VCEO) | 10 V |
|---|---|
| Total power dissipation (Ptot) | 380 mW |
The maximum collector-emitter voltage is 10 V when the base is open.
The maximum total power dissipation is 300 mW when the case temperature is 65 °C.