The BFG540W is a NPN 9 GHz wideband transistor with high power gain, low noise figure and high transition frequency. It is suitable for RF front end wideband applications such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fiber-optic systems.
The Philips BFG540W is an NPN silicon planar epitaxial transistor designed for high power gain and low noise figure in the GHz range. It features gold metallization for excellent reliability and is available in SOT343N and SOT343R plastic packages. The device is suitable for RF front-end wideband applications in analog and digital cellular telephones, cordless telephones, radar detectors, pagers, and satellite television tuners.
| Collector-base voltage | 20 V |
|---|---|
| Collector-emitter voltage | 15 V |
| Collector current (DC) | 120 mA |
| Total power dissipation | 500 mW |
| DC current gain (hFE) | 100 to 250 |
| Transition frequency (fT) | 9 GHz |
| Maximum unilateral power gain (GUM) | 16 dB |
| Noise figure (F) | 2.1 dB |
| Thermal resistance (Rth j-s) | 180 K/W |
It is used in RF front-end wideband applications such as analog and digital cellular telephones, cordless telephones, radar detectors, pagers, and satellite television tuners.
The maximum DC collector current is 120 mA.
The transition frequency is 9 GHz.