This document describes the features and characteristics of the BFG540 series wideband transistors, including high power gain, low noise figure, high transition frequency, and gold metallization for excellent reliability. These transistors are intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones, radar detectors, satellite TV tuners, MATV/CATV amplifiers, and repeater amplifiers in fiber-optical systems.
This document is a product specification sheet for the Philips BFG540 series of NPN silicon planar epitaxial transistors. These devices are designed for high-frequency applications in the GHz range, including analog and digital cellular telephones, cordless phones, radar detectors, satellite TV tuners, and amplifiers.
| Transition frequency (ft) | 9 GHz |
|---|---|
| Maximum collector-base voltage (Vcbo) | 20 V |
| Maximum collector-emitter voltage (Vceo) | 15 V |
| Maximum DC collector current (Ic) | 120 mA |
| Total power dissipation (Prot) | 400 mW |
| Maximum unilateral power gain (Gum) | 18 dB |
The storage temperature ranges from -65 to +150 °C.