This document describes an NPN silicon planar epitaxial transistor with features like high power gain, low noise figure, and high transition frequency. The product is intended for RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones, radar detectors, pagers, and Satellite Antenna TeleVision (SATV) tuners.
This document is a product data sheet for the BFG310W/XR, an NPN silicon planar epitaxial transistor designed for high power gain and low noise figure. It features gold metallization for reliability and is housed in a 4-pin dual-emitter SOT343R plastic package.
The device is intended for Radio Frequency (RF) front-end applications in the GHz range, including analog and digital cellular telephones, cordless phones, radar detectors, pagers, and SATV tuners. The datasheet provides quick reference data, pinning information, ordering details, marking codes, limiting values, thermal characteristics, electrical characteristics with graphs, SPICE parameters for simulation, package equivalent circuit components, and application notes.
| Package type | 4-pin dual-emitter SOT343R plastic package |
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It is intended for RF front end applications in the GHz range, such as cellular telephones, cordless telephones, radar detectors, pagers, and SATV tuners.
The maximum total power dissipation is 60 mW when the soldering point temperature is below 145 °C.
The maximum collector-emitter voltage is 6 V with an open base condition.
It achieves a minimum transition frequency of 14 GHz when the ambient temperature is 25 °C.