BFG31 is a PNP type 5 GHz wideband transistor, features high output voltage capability, high gain bandwidth product and good thermal stability. It is mounted in a plastic SOT223 envelope and intended for wideband amplifier applications. Its NPN complement is the BFG97.
The Philips BFG31 is a PNP planar epitaxial transistor designed for wideband amplifier applications. It features high output voltage capability, high gain bandwidth product, and good thermal stability. The device is mounted in a plastic SOT223 envelope.
| Collector-emitter voltage | -15 V |
|---|---|
| DC collector current | -100 mA |
| Total power dissipation | 1 W |
| Transition frequency | 5.0 GHz |
| Maximum unilateral power gain | 12 dB |
| Output voltage | -600 mV |
| Thermal resistance junction to soldering point | 40 K/W |
The maximum total power dissipation is 1 W when the temperature at the soldering point is up to 135 °C.
The maximum collector-emitter voltage is 15 V when the base is open.
The typical DC current gain is 25 when the collector current is -70 mA and the collector-emitter voltage is -10 V.