This document describes the features and characteristics of the BFG10W/X UHF power transistor, including high efficiency, small size, and gold metallization for excellent reliability. The product is suitable for common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz.
This document is a product specification datasheet for the Philips BFG10W/X, an NPN silicon planar epitaxial UHF power transistor. The device features gold metallization for reliability and comes in a 4-pin SOT343 plastic package.
The datasheet provides quick reference data for RF performance at 900 MHz and 1.9 GHz under pulsed class-AB operation, along with limiting values and thermal characteristics. It also includes application information with test circuit diagrams for both operating frequencies.
| Package Type | 4-pin SOT343 plastic package |
|---|---|
| Collector-Base Voltage (Max) | 20 V |
| Collector-Emitter Voltage (Max) | 10 V |
| Emitter-Base Voltage (Max) | 2.5 V |
| Collector Current (DC) (Max) | 250 mA |
| Total Power Dissipation (Max) | 400 mW |
| Operating Frequency Range | 900 MHz and 1.9 GHz |
The maximum total power dissipation is 400 mW when the temperature at the soldering point (Ts) is up to 102 °C.
The BFG10W/X is encapsulated in a plastic, 4-pin SOT343 package.
No, Philips states these products are not designed for use in life support appliances or systems.