BFG10 is a NPN 2 GHz RF power transistor produced by Philips Semiconductors. It has the characteristics of high power gain, high efficiency, and small size. It is mainly used in hand-held radio equipment.
This document is a product specification for the Philips BFG10 and BFG10/X, which are NPN silicon planar epitaxial transistors designed for high power gain and efficiency in RF applications up to 2 GHz. The devices are encapsulated in a 4-pin SOT143 package and feature gold metallization for reliability. They are intended for use in common emitter class-AB operation within hand-held radio equipment.
| Operating Frequency | 2 GHz |
|---|---|
| Transistor Type | NPN |
| Collector-Emitter Voltage (Max) | 8 V |
| Emitter-Base Voltage (Max) | 2.5 V |
| Package Type | SOT143 |
The transistor is designed for operation up to 2 GHz.
It is available in a 4-pin SOT143 plastic package.