Key facts
- Brand
- Infineon
- Model
- BFP540
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-04-06
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Infineon BFP540 NPN Silicon RF Transistor Datasheet
The BFP540 is an N‑type silicon RF transistor designed for high‑gain, low‑noise amplification up to 1.8 GHz. It features gold metallization for reliability and is ESD‑sensitive, requiring careful handling.
The datasheet lists maximum ratings such as 45 V collector‑emitter voltage and 80 mA collector current, detailed DC and AC characteristics, transition frequency up to 30 GHz, noise figure as low as 0.9 dB, and provides a complete Gummel‑Poon SPICE model in Berkeley‑SPICE 2G.6 syntax for circuit simulation.
Infineon BFP540 specifications
| Collector‑emitter voltage (VCEO) | 45 V |
|---|---|
| Collector current (IC) | 80 mA |
| Total power dissipation | 250 mW |
| Transition frequency (fT) | 21‑30 GHz |
| Noise figure (NF) | 0.9 dB |
| Junction temperature (Tj) | 150 °C |
All Infineon BFP540 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector‑emitter voltage for the BFP540?
The BFP540 can withstand up to 45 V between collector and emitter.
What is the typical transition frequency (fT) of the BFP540?
The transition frequency ranges from 21 GHz to 30 GHz.
What is the maximum collector‑emitter voltage for the BFP540?
The BFP540 can withstand up to 45 V between collector and emitter.
What is the transition frequency (fT) of the BFP540?
The transistor’s transition frequency ranges from 21 GHz to 30 GHz.
What is the maximum collector‑emitter voltage for the BFP540?
The BFP540 can withstand up to 45 V between collector and emitter.
What is the transition frequency (fT) of the BFP540?
The typical transition frequency is about 21 GHz.