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- Brand
- Infineon
- Model
- SPI16N50C3
- Industry
- Industrial
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- 5
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- EN
- Last added
- 2012-04-06
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Infineon SPP16N50C3 / SPI16N50C3 / SPA16N50C3 Datasheet
The SPP16N50C3, SPI16N50C3 and SPA16N50C3 are Cool MOS™ power transistors offering 580 V rating, ultra‑low gate charge and high transconductance. They are supplied in several isolated and non‑isolated TO‑220 and TO‑262 packages and are RoHS compliant.
The datasheet provides maximum ratings such as 16 A continuous drain current, 500 V drain‑source voltage, 20 V gate‑source voltage and 160 W power dissipation (25 °C). Thermal characteristics include a junction‑to‑case resistance of 0.78 K/W and detailed transient thermal impedance curves. Electrical parameters like capacitances, on‑state resistance, gate charge and avalanche energy (460 mJ) are also listed.
Infineon SPI16N50C3 specifications
| Gate‑Source voltage (VGS) | +20 V (continuous), +30 V (AC) |
|---|---|
| Power dissipation (PD) | 160 W at 25 °C |
| Avalanche energy (single pulse) | 460 mJ |
Source: Infineon SPP16N50C3 / SPI16N50C3 / SPA16N50C3 Datasheet
All Infineon SPI16N50C3 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
- Infineon SPP16N50C3 / SPI16N50C3 / SPA16N50C3 Datasheet 14 p
- INFINEON SPI16N50C3 SPA16N50C3 Manual 14 p
- Infineon SPP16N50C3 SPB16N50C3 SPI16N50C3 SPA16N50C3 Power Transistor Datasheet 13 p
- Infineon SPP16N50C3 / SPB16N50C3 / SPI16N50C3 / SPA16N50C3 Power MOSFET Datasheet 13 p
- Infineon SPP16N50C3/SPB16N50C3/SPI16N50C3/SPA16N50C3 Datasheet 13 p
Questions answered in these manuals
What is the power dissipation capability at 25 °C?
The part can dissipate up to 160 W when mounted on a suitable heatsink at 25 °C.
From: Infineon SPP16N50C3 / SPI16N50C3 / SPA16N50C3 Datasheet
What is the maximum continuous drain current for these MOSFETs?
The maximum continuous drain current is 16 A.
From: Infineon SPP16N50C3 SPB16N50C3 SPI16N50C3 SPA16N50C3 Power Transistor Datasheet
What is the avalanche energy per pulse?
The single‑pulse avalanche energy is specified as 460 mJ.
From: Infineon SPP16N50C3 SPB16N50C3 SPI16N50C3 SPA16N50C3 Power Transistor Datasheet
What is the maximum continuous drain current for these MOSFETs?
The maximum continuous drain current is 16 A.
From: Infineon SPP16N50C3 / SPB16N50C3 / SPI16N50C3 / SPA16N50C3 Power MOSFET Datasheet
What is the breakdown voltage rating?
The devices are rated for a drain‑source breakdown voltage of 500 V.
From: Infineon SPP16N50C3 / SPB16N50C3 / SPI16N50C3 / SPA16N50C3 Power MOSFET Datasheet
How much avalanche energy can a single pulse deliver?
A single avalanche pulse can deliver up to 460 mJ of energy.
From: Infineon SPP16N50C3/SPB16N50C3/SPI16N50C3/SPA16N50C3 Datasheet