Key facts
- Brand
- Infineon
- Model
- BCV61
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-09
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Infineon Technologies BCV61 Datasheet
This document is a technical datasheet for the Infineon Technologies BCV61 series of NPN silicon double transistors. These devices are designed specifically to be used as current mirrors, offering good thermal coupling and Vge matching between the two internal transistors.
The datasheet provides comprehensive electrical characteristics at 25°C, including DC parameters such as collector-emitter breakdown voltage, DC current gain (hFE) for variants A, B, and C, and saturation voltages. It also lists AC characteristics like transition frequency and capacitance values.
Infineon BCV61 specifications
| Collector-emitter voltage (VcEO) | 30 V |
|---|---|
| DC collector current (Ie) | 100 mA |
| Peak collector current (lou) | 200 mA |
| Total power dissipation (Ptot) at Tj=99°C | 300 mW |
| Junction temperature range | -65 ... 150 °C |
| Transition frequency (fT) | 250 MHz |
All Infineon BCV61 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the primary application of the BCV61 transistor?
It is designed to be used as a current mirror.
Which package type does the BCV61 use?
The device uses the SOT143 package.
What is the maximum collector‑emitter voltage for the BCV61?
The BCV61 can withstand up to 30 V between collector and emitter.
From: Infineon BCV61 Datasheet
Which package does the BCV61 use?
The device is supplied in a SOT‑143 surface‑mount package.
From: Infineon BCV61 Datasheet