Key facts
- Brand
- Infineon
- Model
- BAT64
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-07-09
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Infineon BAT 64 Silicon Schottky Diodes Datasheet
This document is a technical datasheet for the Infineon Technologies BAT 64 series of Silicon Schottky Diodes. The device is designed for low-loss, fast-recovery applications including meter protection, bias isolation, and clamping.
The datasheet provides comprehensive electrical characteristics at 25°C, including DC parameters such as reverse current and forward voltage across various currents, as well as AC characteristics like diode capacitance. It also details maximum ratings for voltage, current, power dissipation, and temperature limits.
Infineon BAT64 specifications
| Diode reverse voltage | 40 V |
|---|---|
| Forward current | 250 mA |
| Average forward current (60/60Hz, sinus) | 120 mA |
| Surge forward current (t < 10ms) | 800 mA |
| Total power dissipation, Tc = 25 °C | 250 mW |
| Junction temperature | -55 ... 150 °C |
All Infineon BAT64 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the applications for the BAT 64?
The device is intended for low-loss, fast-recovery, meter protection, bias isolation and clamping applications.
What is the maximum junction temperature?
The maximum junction temperature rating is 150 °C.
What are the primary applications for the BAT64 diodes?
These diodes are designed for low-loss, fast-recovery uses such as meter protection, bias isolation, and clamping applications.
What is the maximum forward current rating for these diodes?
The maximum forward current rating is 250 mA.