Key facts
- Brand
- Infineon
- Model
- BCW67
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-09
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Infineon BCW67/BCW68 PNP Silicon AF Transistors Datasheet
This document is a datasheet for the Infineon BCW67 and BCW68 series of PNP Silicon AF transistors. These components are designed for general AF applications and are available in SOT23 packages with various suffixes (A, B, C, F, G, H). The datasheet provides maximum ratings, electrical characteristics, and graphical data regarding power dissipation, transition frequency, and saturation voltages.
Read onlineInfineon BCW67 specifications
| Collector-emitter voltage | 32 V (BCW67), 45 V (BCW68) |
|---|---|
| DC collector current | 800 mA |
| Peak collector current | 1 A |
| Total power dissipation | 330 mW (Ts = 79 °C) |
| Junction temperature | 150 °C |
Source: Infineon BCW67/BCW68 PNP Silicon AF Transistors Datasheet
All Infineon BCW67 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the complementary types for BCW67 and BCW68?
The complementary types are BCW65 and BCW66 (NPN).
From: Infineon BCW67/BCW68 PNP Silicon AF Transistors Datasheet
What is the maximum storage temperature?
The storage temperature range is from -65 °C to 150 °C.
From: Infineon BCW67/BCW68 PNP Silicon AF Transistors Datasheet
What are the complementary types for BCW67 and BCW68?
The complementary NPN types are BCW65 and BCW66.
What is the DC current gain for group A/F at Ic = 100uA?
The minimum DC current gain is 35.