Key facts
- Brand
- Infineon
- Model
- SPB16N50C3
- Industry
- Industrial
- Documents
- 4
- Languages
- EN
- Last added
- 2012-04-06
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Infineon SPB16N50C3 specifications
| Continuous drain current (Id) | 16 A |
|---|---|
| Gate‑source voltage (Vgs) max | +20 V |
| Avalanche energy (single pulse) | 460 mJ |
| Drain‑source breakdown voltage (Vds) | 500 V |
| Gate charge total (Qg) | 66 nC |
Source: Infineon SPP16N50C3 SPB16N50C3 SPI16N50C3 SPA16N50C3 Power Transistor Datasheet
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Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current for these MOSFETs?
The maximum continuous drain current is 16 A.
From: Infineon SPP16N50C3 SPB16N50C3 SPI16N50C3 SPA16N50C3 Power Transistor Datasheet
What is the avalanche energy per pulse?
The single‑pulse avalanche energy is specified as 460 mJ.
From: Infineon SPP16N50C3 SPB16N50C3 SPI16N50C3 SPA16N50C3 Power Transistor Datasheet
What is the maximum continuous drain current for these MOSFETs?
The maximum continuous drain current is 16 A.
From: Infineon SPP16N50C3 / SPB16N50C3 / SPI16N50C3 / SPA16N50C3 Power MOSFET Datasheet
What is the breakdown voltage rating?
The devices are rated for a drain‑source breakdown voltage of 500 V.
From: Infineon SPP16N50C3 / SPB16N50C3 / SPI16N50C3 / SPA16N50C3 Power MOSFET Datasheet
How much avalanche energy can a single pulse deliver?
A single avalanche pulse can deliver up to 460 mJ of energy.
From: Infineon SPP16N50C3/SPB16N50C3/SPI16N50C3/SPA16N50C3 Datasheet
What is the rated gate‑source voltage limit?
The gate‑source voltage is limited to +20 V (continuous) and +30 V for AC operation above 1 Hz.
From: Infineon SPP16N50C3/SPB16N50C3/SPI16N50C3/SPA16N50C3 Datasheet