Key facts
- Brand
- Infineon
- Model
- SPD02N60C3
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-04-06
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Infineon SPD02N60C3 / SPU02N60C3 Power Transistor Datasheet
Datasheet 13 pages · 1.2 MB · EN
This document provides the electrical, thermal and mechanical specifications for Infineon's SPD02N60C3 and SPU02N60C3 Cool MOS™ power transistors. It includes maximum ratings, characteristic curves, and package information for the TO‑252 and TO‑251 variants.
Key data such as continuous drain current, breakdown voltage, on‑resistance, gate charge and switching loss parameters are listed, along with safe operating area and transient thermal impedance graphs to aid designers in selecting the appropriate device for high‑voltage applications.
Infineon SPD02N60C3 specifications
| Continuous drain current (Id) | 1.8 A |
|---|---|
| Gate threshold voltage (Vgs(th)) | 2.1‑3.9 V |
| Drain‑source breakdown voltage (Vds) | 600 V |
| Avalanche energy (single pulse) | 50 mJ |
| Power dissipation (Pd) at 25 °C | 25 W |
| Operating temperature range | -55 °C to +150 °C |
| Package type | P‑TO252 (also P‑TO251) |
All Infineon SPD02N60C3 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current of the SPDO2N60C3?
The device can conduct a continuous drain current of 1.8 A at 25 °C.
What is the gate threshold voltage range?
The gate threshold voltage is between 2.1 V and 3.9 V.