This document describes the features and characteristics of the BFP540 NPN Silicon RF Transistor, which is suitable for highest gain low noise amplifier at 1.8 GHz. It has an outstanding Gms = 21 dB and a Noise Figure F = 0.9 dB. The gold metallization design ensures high reliability.
The BFP540 is an N‑type silicon RF transistor designed for high‑gain, low‑noise amplification up to 1.8 GHz. It features gold metallization for reliability and is supplied in a SOT‑343 package.
The document lists maximum ratings, DC and AC electrical characteristics, transition frequency, noise figure, thermal data, and a complete Gummel‑Poon SPICE model for circuit simulation.
| Collector‑emitter voltage (VCEO) max | 45 V |
|---|---|
| Collector current (IC) max | 80 mA |
| Total power dissipation (Ptot) max | 250 mW |
| Transition frequency (fT) | 21‑30 GHz |
| Noise figure at 1.8 GHz | 0.9 dB |
| Junction temperature (Tj) max | 150 °C |
The BFP540 can withstand up to 45 V between collector and emitter.
The transistor’s transition frequency ranges from 21 GHz to 30 GHz.
The noise figure is 0.9 dB at 1.8 GHz.