Key facts
- Brand
- Infineon
- Model
- DN2
- Industry
- Industrial
- Documents
- 5
- Languages
- EN
- Last added
- 2012-04-06
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Infineon BSM10GD120DN2 IGBT Power Module Datasheet
The BSM10GD120DN2 is a 3‑phase full‑bridge IGBT power module with fast free‑wheel diodes, packaged in an insulated metal base plate (ECONOPACK). It is rated for 1200 V collector‑emitter voltage and 15 A continuous collector current at 25 °C.
The document provides detailed maximum ratings, static and switching characteristics, safe operating area limits, capacitance values, and thermal impedance data. It also includes a package outline, circuit diagram, and terms of use for technical personnel.
Infineon DN2 specifications
| Collector‑emitter voltage (VCE) | 1200 V |
|---|---|
| Gate‑emitter voltage (VGE) | +20 V |
| DC collector current (IC) | 15 A |
| Power dissipation per IGBT (P_R) | 80 W @ 25 °C |
| Thermal resistance, chip‑case (R_thc) | <1.52 K/W |
All Infineon DN2 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector‑emitter voltage of the BSM10GD120DN2?
The module is rated for a maximum collector‑emitter voltage of 1200 V.
What is the continuous DC collector current at 25 °C?
The continuous DC collector current is 15 A at an ambient temperature of 25 °C.
What is the maximum collector‑emitter voltage rating?
The module is rated for a collector‑emitter voltage of 1200 V.
How much continuous collector current can the module handle at 25 °C?
It can handle up to 150 A of continuous collector current at 25 °C.
What is the maximum collector‑emitter voltage of the BSM 25 GD 120 DN2?
The module can withstand up to 1200 V between collector and emitter.
From: Infineon BSM 25 GD 120 DN2 IGBT Power Module Datasheet
What is the rated continuous collector current at 25 °C?
The rated continuous collector current is 35 A at 25 °C.
From: Infineon BSM 25 GD 120 DN2 IGBT Power Module Datasheet