Key facts
- Brand
- Infineon
- Model
- BSP 317 P
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-06
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Infineon BSP317P Datasheet
The Infineon BSP317P is a P‑channel small‑signal MOSFET presented in a PG‑SOT‑223 package. The document provides a product summary, maximum ratings, thermal characteristics, and detailed electrical parameters such as drain current, breakdown voltage, and on‑state resistance.
Key sections include maximum ratings, thermal resistance, static and dynamic electrical characteristics, gate‑charge data, safe operating area curves, and typical output characteristics. The final page contains legal notices and contact information for Infineon Technologies AG.
Infineon BSP 317 P specifications
| Continuous drain current (Id) | -0.43 A (typ at 25 °C) |
|---|---|
| Pulsed drain current (Id,puls) | -1.72 A (at 25 °C) |
| Drain‑source breakdown voltage (Vdss) | -250 V |
| Maximum power dissipation (Pmax) | 1.8 W (at 25 °C) |
| Operating temperature range | -59 °C to +150 °C |
Source: Infineon BSP317P Datasheet
All Infineon BSP 317 P documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current of the BSP317P?
The maximum continuous drain current is -0.43 A at 25 °C.
What is the maximum power dissipation rating?
The device can dissipate up to 1.8 W at 25 °C.