Key facts
- Brand
- Infineon
- Model
- BFP740
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-05
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Infineon BFP740 RF Transistor Datasheet
Datasheet 4 pages · 45 KB · EN
The BFP740 is an N‑type silicon‑germanium RF transistor offering high gain (27.5 dB at 1.8 GHz) and ultra‑low noise (0.5 dB at 1.8 GHz). It is designed for wireless applications such as CDMA and WLAN up to 10 GHz and features gold metallization for reliability.
Key electrical parameters include a collector‑emitter voltage of 13 V, collector current of 30 mA, maximum power dissipation of 160 mW, and a transition frequency (fT) of 42 GHz. The device is supplied in a SOT‑343 package and requires careful ESD handling.
All Infineon BFP740 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical noise figure at 1.8 GHz?
The typical noise figure at 1.8 GHz is 0.5 dB.
What noise figure does the BFP740 achieve at 1.8 GHz?
It achieves a noise figure of 0.5 dB at 1.8 GHz.