Key facts
- Brand
- Infineon
- Model
- BAV99
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-06-07
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Infineon BA99... DATA SHEET
This document is a datasheet for the Infineon Technologies BAV99 series of silicon switching diodes. It details various package configurations including SOT23, TSFP-3, SOT363, SC74, and others, designed for high-speed switching applications.
The text provides maximum ratings such as a reverse voltage of 80V and forward current of 200mA. It also lists specific electrical characteristics like breakdown voltage, reverse current, and forward voltage at different temperatures.
Infineon BAV99 specifications
| Diode reverse voltage (VR) | 80 V |
|---|---|
| Peak reverse voltage (Vem) | 85 |
| Forward current (Ir) | 200 mA |
| Junction temperature (Tj) | 150 °C |
| Breakdown voltage (VBR) | 85 V |
| Diode capacitance (Cy) | 1.5 pF |
Source: Infineon BA99... DATA SHEET
All Infineon BAV99 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum forward current for this diode?
The maximum forward current rating is 200 mA.
What is the maximum reverse voltage rating at 25°C?
The maximum reverse voltage is 80 V.
What is the maximum reverse voltage for the BAV99 diode?
The maximum reverse voltage is 80 V.
What forward current can the BAV99 handle continuously?
The diode is rated for a continuous forward current of 200 mA.
What is the maximum reverse voltage for the BAV99 diode?
The BAV99 diode can withstand a reverse voltage of 80 V.
What is the forward current rating of the BAV99 diode?
The diode is rated for a continuous forward current of 200 mA.