Key facts
- Brand
- Infineon
- Model
- BFS483
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-01
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Infineon BFS483 NPN Silicon RF Transistor Datasheet
Datasheet 6 pages · 59 KB · EN
The document describes the BFS483, an NPN Silicon RF Transistor designed for low-noise and high-gain broadband amplifier applications. It features two galvanically isolated transistors within a single SOT-363 package. The device is optimized for collector currents ranging from 2 mA to 28 mA with a maximum operating frequency of 8 GHz.
Read onlineInfineon BFS483 specifications
| Collector-emitter voltage (Vceo) | 12 V |
|---|---|
| Collector current (Ic) | 65 mA |
| Total power dissipation (Ptot) | 450 mW |
| Junction temperature (Tj) | -65 ... 150 °C |
| Noise figure at 900 MHz | 1.2 dB |
All Infineon BFS483 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
How many transistors are inside the package?
There are two galvanically isolated transistors in one package.
What is the maximum collector current?
The maximum rated collector current is 65 mA.
What is the transition frequency of the BFS482?
The transition frequency (fT) is 8 GHz.
From: lnfineon BFS483 handbook
What is the noise figure at 900 MHz?
The noise figure is 1.2 dB at 900 MHz.
From: lnfineon BFS483 handbook