Infineon BFS483 Manuals

lnfineon BFS483 handbook(1)

This document describes the features and characteristics of the BFS483 NPN Silicon RF Transistor. It is designed for low-noise, high-gain broadband amplifiers with collector currents ranging from 2 mA to 28 mA. It has an fT of 8 GHz and a gain of 1.2 dB at 900 MHz. The transistor package contains two galvanically isolated transistors.