Key facts
- Brand
- Infineon
- Model
- SPB17N80C3
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-06
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Infineon SPB17N80C3 Power Transistor Datasheet
The SPB17N80C3 CoolMOS® power transistor is designed for high‑voltage industrial and switching applications. It features ultra‑low gate charge, low effective capacitances, and a rugged dv/dt rating, making it suitable for active‑clamp forward topologies and other demanding circuits.
The device is supplied in a PG‑TO263 (D2PAK) package, is RoHS‑compliant, and includes detailed electrical, thermal, and dynamic characteristics such as a continuous drain current of 17 A, a drain‑source breakdown voltage of 800 V, and a typical on‑state resistance of 0.25 Ω.
Infineon SPB17N80C3 specifications
| Continuous drain current (Id) | 17 A |
|---|---|
| Pulsed drain current (Id,pulse) | 51 A |
| Drain‑source breakdown voltage (Vds) | 800 V |
| Gate threshold voltage (Vgs(th)) | 2.0 V – 3.9 V |
| On‑state resistance (Rds(on)) | 0.25 Ω typical |
| Input capacitance (Ciss) | 2300 pF |
| Output capacitance (Coss) | 100 pF max |
| Total gate charge (Qg) | 177 nC |
| Avalanche energy (single pulse) | 670 mJ |
All Infineon SPB17N80C3 documents by type
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the continuous drain current rating of the SPB17N80C3?
The device can conduct a continuous drain current of 17 A at 25 °C.
What is the maximum drain‑source voltage for this transistor?
The SPB17N80C3 is rated for a drain‑source breakdown voltage of 800 V.