Key facts
- Brand
- Infineon
- Model
- SPP02N80C3
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-06
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Infineon SPP02N80C3 / SPA02N80C3 Power MOSFET Datasheet
The Infineon SPP02N80C3 and SPA02N80C3 are high‑voltage, low‑gate‑charge power MOSFETs offered in a fully isolated PG‑TO220‑3‑31 (FullPAK) package. They feature an 800 V drain‑source breakdown voltage, 2 A continuous drain current, and ultra‑low on‑state resistance.
The document provides maximum ratings, thermal characteristics, electrical parameters, transient thermal impedance, safe operating area, gate‑charge data, and package dimensions, along with legal and warranty notices.
Infineon SPP02N80C3 specifications
| Avalanche Energy (single pulse) | 90 mJ |
|---|---|
| Power Dissipation at 25 °C (PD) | 42 W |
| Package | PG‑TO220‑3‑31 (FullPAK) |
Source: Infineon SPP02N80C3 / SPA02N80C3 Power MOSFET Datasheet
All Infineon SPP02N80C3 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
Which package is used for the SPP02N80C3 and SPA02N80C3?
They are supplied in a PG‑TO220‑3‑31 (FullPAK) fully isolated package.
From: Infineon SPP02N80C3 / SPA02N80C3 Power MOSFET Datasheet
Which package is used for the SPP02N80C3/SPA02N80C3?
Both variants are supplied in a PG‑TO220‑3‑31 (FullPAK) package.