BFP540 is an NPN silicon RF transistor with outstanding Noise Figure F=0.9dB and high reliability gold metallization, suitable for 1.8GHz highest gain low noise amplifier.
The BFP540 is an N‑type silicon RF transistor designed for high‑gain, low‑noise amplification up to 1.8 GHz. It features gold metallization for reliability and is ESD‑sensitive, requiring careful handling.
The datasheet lists maximum ratings such as 45 V collector‑emitter voltage and 80 mA collector current, detailed DC and AC characteristics, transition frequency up to 30 GHz, noise figure as low as 0.9 dB, and provides a complete Gummel‑Poon SPICE model in Berkeley‑SPICE 2G.6 syntax for circuit simulation.
| Collector‑emitter voltage (VCEO) | 45 V |
|---|---|
| Collector current (IC) | 80 mA |
| Total power dissipation | 250 mW |
| Transition frequency (fT) | 21‑30 GHz |
| Noise figure (NF) | 0.9 dB |
| Junction temperature (Tj) | 150 °C |
The BFP540 can withstand up to 45 V between collector and emitter.
The transition frequency ranges from 21 GHz to 30 GHz.
A Gummel‑Poon model in Berkeley‑SPICE 2G.6 syntax is supplied.
The device is ESD‑sensitive, so proper electrostatic discharge precautions must be observed.