The BFP540 is a NPN Silicon RF Transistor from Dinghao Electronics. It has an outstanding Gms = 21 dB Noise Figure F = 0.9 dB and is gold metallization for high reliability.
This document presents the key specifications of the Infineon BFP540 NPN silicon RF transistor, including its maximum voltage and current ratings, power dissipation limits, and thermal characteristics. It also lists detailed DC and AC electrical parameters such as gain, noise figure, and transition frequency.
Additional sections cover the SPICE Gummel‑Poon model parameters, package equivalent circuit, permissible pulse load curves, and noise figure versus frequency data, enabling designers to simulate and integrate the device accurately in RF applications.
| Collector‑emitter voltage (VCEO) | 45 V |
|---|---|
| Collector current (IC) | 80 mA |
| Base current (IB) | 8 mA |
| Total power dissipation (Ptot) | 250 mW |
| Transition frequency (fT) | ≈21 GHz |
| Noise figure (NF) | 0.9 dB |
The BFP540 can withstand up to 45 V between collector and emitter.
The typical transition frequency is about 21 GHz.
Use the Gummel‑Poon model parameters provided in the SPICE section of the datasheet.
The noise figure is approximately 0.9 dB at 1.8 GHz.