Key facts
- Brand
- Infineon
- Model
- BFS17P
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-01
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Infineon BFS17P NPN Silicon RF Transistor Datasheet
This document is a technical datasheet for the Infineon BFS17P, an NPN silicon RF transistor designed for broadband amplifiers operating up to 1 GHz. The device supports collector currents ranging from 1 mA to 20 mA.
The datasheet provides comprehensive electrical specifications including DC characteristics such as breakdown voltages and current gain, AC parameters like transition frequency and noise figure, and maximum ratings for voltage, power dissipation, and temperature.
Infineon BFS17P specifications
| Collector-emitter voltage (VCEO) | 15 V |
|---|---|
| Collector current (IC) | 25 mA |
| Total power dissipation (Ptot) | 280 mW |
| Junction temperature (Tj) | -65 ... 150 °C |
| Transition frequency (fT) @ 2 mA | 1.4 GHz |
| Noise figure (F) | 3.5 dB |
All Infineon BFS17P documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector-emitter voltage for this transistor?
The maximum collector-emitter voltage (VcEO) is 15 V.
What is the maximum total power dissipation at a junction temperature below 55°C?
The permissible total power dissipation (Prot) is 280 mW when the junction temperature is less than 55°C.
What is the maximum collector‑emitter voltage of the BFS17P?
The maximum collector‑emitter voltage is 15 V.
What package does the BFS17P use?
The BFS17P is supplied in an SOT‑23 package.