Key facts
- Brand
- Infineon
- Model
- BFS17P
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-01
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Datasheetlnfineon BFS17P handbook
lnfineon BFS17P handbook
Datasheet
BFS17P is a NPN Silicon RF Transistor for broadband amplifiers up to 1GHz at collector currents from 1 mA to 20 mA.
Read onlineInfineon BFS17P specifications
| Collector‑emitter voltage (VCEO) | 15 V |
|---|---|
| Collector‑base voltage (VCBO) | 25 V |
| Emitter‑base voltage (VEB) | 25 V |
| Collector current (IC) | 25 mA |
| Total power dissipation (PD) | 280 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Ta) | -65 °C to 150 °C |
| Package type | SOT‑23 |
All Infineon BFS17P documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector‑emitter voltage of the BFS17P?
The maximum collector‑emitter voltage is 15 V.
What package does the BFS17P use?
The BFS17P is supplied in an SOT‑23 package.