Key facts
- Brand
- Infineon
- Model
- BA592
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-06
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Infineon BA592/BA892 Silicon RF Switching Diode Datasheet
The BA592/BA892 series are silicon RF switching diodes intended for band switching in TV/VTR tuners and mobile applications. They feature very low forward resistance and small capacitance, available in several package types such as SOT-23 and SMD.
The datasheet provides maximum ratings, thermal resistance, DC and AC electrical characteristics, capacitance versus frequency, and insertion loss data. Key parameters include a reverse voltage of 35 V, forward current of 100 mA, and operating temperature range from –55 °C to 125 °C.
Infineon BA592 specifications
| Reverse voltage (Vp) | 35 V |
|---|---|
| Forward current (Ir) | 100 mA |
| Junction temperature | 150 °C |
| Operating temperature range | -55 … 125 °C |
| Reverse current (Ip) max | 20 nA |
| Forward voltage at 1 V | 1 V |
| Diode capacitance at 1 MHz | 0.65 pF |
| Forward resistance at 3 mA, 100 MHz | 0.45 Ω |
Source: Infineon BA592/BA892 Silicon RF Switching Diode Datasheet
All Infineon BA592 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum reverse voltage for the BA592/BA892 diodes?
The maximum reverse voltage is 35 V.
From: Infineon BA592/BA892 Silicon RF Switching Diode Datasheet
What is the typical forward resistance at 3 mA and 100 MHz?
The typical forward resistance is 0.45 Ω.
From: Infineon BA592/BA892 Silicon RF Switching Diode Datasheet
What is the maximum reverse voltage rating of the BA592/BA892 diodes?
The diodes are rated for a maximum reverse voltage of 35 V.
From: Infineon BA592/BA892 Series Silicon RF Switching Diode Datasheet
What is the typical forward resistance at 3 mA and 100 MHz?
Typical forward resistance is 0.45 Ω under those conditions.
From: Infineon BA592/BA892 Series Silicon RF Switching Diode Datasheet