Key facts
- Brand
- Infineon
- Model
- SPP08N80C3
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-04-06
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INFINEON SPP08N80C3/SPI08N80C3/SPA08N80C3 Manual
This Infineon datasheet provides detailed specifications for three 800 V, 8 A MOSFET devices (SPPO8N80C3, SPIO8N80C3, SPA08N80C3). It includes maximum ratings, thermal characteristics, electrical parameters, and safe operating area graphs for each package type.
The document also lists package information (PG‑TO220‑3‑31, PG‑TO262, PG‑TO220) and compliance notes such as RoHS and JEDEC qualification. It is intended for designers and engineers who need precise performance data for high‑voltage power transistor applications.
Infineon SPP08N80C3 specifications
| Continuous drain current (Id) @ 25 °C | 8 A |
|---|---|
| On‑state resistance (Rds(on)) typical | 0.65 mΩ |
| Total gate charge (Qg) @ 640 V, 8 A | 40‑52 nC |
| Maximum power dissipation @ 25 °C | 104 W |
| Avalanche energy (single pulse) | 340 mJ |
All Infineon SPP08N80C3 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current for the device at 25 °C?
The maximum continuous drain current is 8 A at 25 °C.
What is the typical on‑state resistance (Rds(on))?
The typical on‑state resistance is 0.65 mΩ.
What is the maximum continuous drain current?
The device can conduct up to 8 A continuously at a case temperature of 25 °C.