Key facts
- Brand
- Infineon
- Model
- BSP171P
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-06
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Infineon BSP171P P-Channel MOSFET Datasheet
Datasheet 9 pages · 595 KB · EN
The Infineon BSP171P is a small‑signal P‑channel MOSFET offered in a PG‑SOT‑223 package. The document provides detailed electrical and thermal specifications, maximum ratings, and characteristic curves for designers.
Key sections cover product summary, maximum ratings, thermal and electrical characteristics, dynamic parameters such as capacitances and switching times, as well as package dimensions and outline.
Infineon BSP171P specifications
| Continuous drain current (Id) | -1.9 A |
|---|---|
| Pulsed drain current (Id,pulse) | -7.6 A |
| Drain‑source breakdown voltage (VDS) | 60 V |
| Gate threshold voltage (VGS(th)) | 2 V |
| On‑state resistance (RDS(on)) max | 0.3 Ω |
| Input capacitance (Ciss) typ | 365 pF |
| Output capacitance (Coss) typ | 105 pF |
| Reverse transfer capacitance (Crss) typ | 40 pF |
| Turn‑on delay time (tON) typ | 6 ns |
| Operating temperature range | -55 °C to 150 °C |
| Package type | PG‑SOT‑223 |
All Infineon BSP171P documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the continuous drain current rating of the BSP171P?
The continuous drain current is rated at -1.9 A at 25 °C.
What is the maximum drain‑source breakdown voltage?
The device can withstand up to 60 V drain‑source breakdown voltage.
What is the continuous drain current rating of the BSP171P?
The BSP171P can conduct a continuous drain current of –1.9 A at 25 °C.
Which package does the BSP171P use?
The device is supplied in a PG‑SOT‑223 (SOT‑223) package.