Key facts
- Brand
- Infineon
- Model
- BFP650
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-05
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Infineon BFP650 NPN SiGe RF Transistor Datasheet
The BFP650 is an NPN silicon‑germanium RF transistor designed for high‑power amplifiers and low‑phase‑noise oscillators. It features gold metallization for high reliability and operates up to 70 GHz.
Key specifications include a collector‑emitter voltage of 4 V, collector current of 150 mA, maximum available gain of 21 dB at 1.8 GHz, and a noise figure of 0.9 dB at the same frequency. The document also supplies a complete Gummel‑Poon SPICE model and package equivalent circuit for circuit designers.
Infineon BFP650 specifications
| Collector‑emitter voltage (VCEO) | 4 V |
|---|---|
| Collector current (IC) | 150 mA |
| Base current (IB) | 10 mA |
| Noise figure (F) | 0.9 dB at 1.8 GHz |
| Transition frequency (fT) | 37 GHz |
All Infineon BFP650 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector‑emitter voltage of the BFP650?
The BFP650 can withstand a collector‑emitter voltage of 4 V.
What is the noise figure of the BFP650 at 1.8 GHz?
The noise figure is 0.9 dB at 1.8 GHz.
What is the maximum collector‑emitter voltage rating of the BFP650?
The maximum collector‑emitter voltage is 4 V.
What is the transition frequency of the BFP650?
The transition frequency is 37 GHz.