Key facts
- Brand
- Infineon
- Model
- BCV62
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-09
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Infineon BCV62 PNP Silicon Double Transistor Datasheet
The Infineon BCV62 is a PNP Silicon Double Transistor designed specifically to be used as a current mirror. It features good thermal coupling and Vge matching, high current gain, and low collector-emitter saturation voltage. The device is available in three types (BCV62A, BCV62B, BCV62C) and is packaged in the SOT143 format.
Read onlineInfineon BCV62 specifications
| Collector-emitter voltage | 30 V |
|---|---|
| DC collector current | 100 mA |
| Peak collector current | 200 mA |
| Total power dissipation | 300 mW |
| Junction temperature | 150 °C |
| Transition frequency | 250 MHz |
Source: Infineon BCV62 PNP Silicon Double Transistor Datasheet
All Infineon BCV62 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the primary application of the BCV62?
The BCV62 is to be used as a current mirror.
From: Infineon BCV62 PNP Silicon Double Transistor Datasheet
What is the maximum junction temperature?
The maximum junction temperature is 150 °C.
From: Infineon BCV62 PNP Silicon Double Transistor Datasheet
What is the maximum collector‑emitter voltage of the BCV62?
The BCV62 can withstand up to 30 V between collector and emitter.
From: Infineon BCV62 PNP Silicon Double Transistor Datasheet
What package does the BCV62 use?
It is supplied in a SOT143 surface‑mount package.
From: Infineon BCV62 PNP Silicon Double Transistor Datasheet