Key facts
- Brand
- Infineon
- Model
- SPP18P06P
- Industry
- Industrial
- Documents
- 2
- Languages
- ZH · EN
- Last added
- 2012-04-06
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Infineon SPP18P06P Power Transistor Datasheet
The SPP18P06P is a P‑channel enhancement‑mode power transistor with a -60 V drain‑source rating and a continuous drain current of -18.6 A. It features low on‑state resistance, avalanche and dv/dt robustness, and operates from -55 °C to +175 °C.
The document provides detailed electrical, thermal, and dynamic parameters, including typical RDS(on) values, gate charge characteristics, avalanche energy, and safe operating area curves, along with mechanical dimensions and package information. This manual is written in Chinese.
Infineon SPP18P06P specifications
| Drain‑source voltage (VDS) | -60 V |
|---|---|
| Continuous drain current (ID) | -18.6 A |
| On‑state resistance (RDS(on)) | 0.13 mΩ (typ) |
| Gate‑source voltage (VGS) rating | ±20 V |
| Power dissipation (Ptot) at 25 °C | 80 W |
| Operating temperature range | -55 °C to +175 °C |
All Infineon SPP18P06P documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage of the SPP18P06P?
The transistor is rated for a maximum drain‑source voltage of -60 V.
What continuous drain current can the SPP18P06P handle?
It can conduct a continuous drain current of -18.6 A.
What is the maximum power dissipation?
The device can dissipate up to 80 W.
What is the gate‑source voltage rating?
The gate‑source voltage rating is +20 V.