Key facts
- Brand
- Infineon
- Model
- BFP520
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-05
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Infineon BFP520 NPN Silicon RF Transistor Datasheet
The BFP520 is an N‑type silicon RF transistor designed for high‑gain low‑noise amplifiers up to 1.8 GHz and oscillators up to 15 GHz. It features a transition frequency of 45 GHz, a typical noise figure of 0.95 dB, and a maximum collector‑emitter voltage of 2.5 V.
The document provides detailed electrical characteristics, maximum ratings, S‑parameters, noise parameters and SPICE model data for the SOT‑343 package. It also includes power‑dissipation curves and permissible pulse‑load information for design and simulation purposes.
Infineon BFP520 specifications
| Collector‑emitter voltage (VCEO) | 2.5 V |
|---|---|
| Collector‑base voltage (VCBO) | 10 V |
| Emitter‑base voltage (VEBO) | 1 V |
| Collector current (IC) | 40 mA |
| Base current (IB) | 4 mA |
| Total power dissipation (PD) | 100 mW |
| Transition frequency (fT) | 45 GHz |
| Noise figure (NF) at 1.8 GHz | 0.95 dB |
| Maximum stable gain (Gms) | 23 dB |
All Infineon BFP520 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector current for the BFP520?
The BFP520 can handle up to 40 mA of collector current.
What is the transition frequency (fT) of the BFP520?
The transistor has a transition frequency of 45 GHz.
What is the transition frequency of the BFP520 transistor?
The transition frequency f_T is 45 GHz.
What is the typical noise figure at 1.8 GHz?
The typical noise figure is 0.95 dB.