Infineon SPA16N50C3 Manuals

This datasheet mainly introduces the features and characteristics of the SPP16N50C3, SPI16N50C3 and SPA16N50C3 products, including rated current, continuous current, pulsed current, avalanche energy, avalanche current, gate source voltage, power dissipation, operating temperature, reverse diode dv/dt and drain source voltage slope.

This document describes the features and characteristics of SPP16N50C3, SPI16N50C3, and SPA16N50C3 Cool MOS™ power transistors, including new high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, improved transconductance, and different package types.

Dinghao provides spot inventory, technical data, encyclopedia information, and hot news. This document describes the features and characteristics of SPP16N50C3, SPB16N50C3, SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor, including new high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitance, improved transconductance, etc.

This document describes the features and characteristics of SPP16N50C3, SPB16N50C3, SPI16N50C3, and SPA16N50C3 Cool MOS™ power transistors. These products adopt a new high-voltage technology and have ultra-low gate charge, periodic avalanche capability, extremely high dv/dt rating, ultra-low effective capacitance, and improved transconductance. The products are available in different packages and have different ordering codes. The document also provides the maximum ratings for each model, such as continuous drain current, pulsed drain current, avalanche energy, avalanche current, gate-source voltage, etc.

SPP16N50C3, SPB16N50C3, SPI16N50C3, SPA16N50C3 are Cool MOS™ power transistors with features of new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.