Key facts
- Brand
- Infineon
- Model
- BFP520F
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-05
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Infineon BFP520F NPN Silicon RF Transistor Datasheet
The BFP520F is an NPN silicon RF transistor designed for high‑gain, low‑noise amplifiers up to 1.8 GHz and for oscillators up to 15 GHz. It features a transition frequency of 45 GHz, a noise figure of 0.95 dB, and gold metallization for reliability.
The document lists maximum ratings, detailed DC and AC electrical characteristics, and a complete SPICE (Gummel‑Poon) model for circuit simulation. Package information for the TSFP‑4 case and thermal resistance data are also included.
Infineon BFP520F specifications
| Collector‑emitter voltage (VCEO) | 2.5 V |
|---|---|
| Collector current (IC) | 40 mA |
| Transition frequency (fT) | 45 GHz |
| Noise figure (NF) | 0.95 dB |
| Total power dissipation (Ptot) | 100 mW |
Source: Infineon BFP520F NPN Silicon RF Transistor Datasheet
All Infineon BFP520F documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector current for the BFP520F?
The maximum collector current is 40 mA.
What is the transition frequency (fT) of the BFP520F?
The transition frequency is 45 GHz.
What is the maximum collector current for the BFP520F?
The maximum collector current is 40 mA.
What is the transition frequency (fT) of the BFP520F?
The transition frequency is 45 GHz.