Key facts
- Brand
- Infineon
- Model
- SPP04N50C3
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-06
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Infineon SPP04N50C3/SPA04N50C3 Datasheet
This datasheet provides detailed electrical, thermal, and mechanical specifications for the Infineon SPP04N50C3 and SPA04N50C3 Cool MOS™ power transistors. It includes maximum ratings, characteristic curves, and typical performance parameters for both the TO‑220 and FullPAK packages.
Key sections cover maximum ratings, thermal characteristics, electrical characteristics, transient thermal impedance, typical output and transfer characteristics, and reference dimensions. The document also contains safety and warranty notices from Infineon Technologies AG.
Infineon SPP04N50C3 specifications
| Continuous drain current (Id) at 25 °C | 45 A |
|---|---|
| Pulsed drain current (Id,pulse) | 13.5 A |
| Avalanche energy, single pulse (Eas) | 130 mJ |
| Gate‑source voltage rating (Vgs) | +20 V (continuous), +30 V (AC) |
| Drain‑source breakdown voltage (Vds) | 500 V |
| On‑state resistance (Rds(on)) typical | 0.85 mΩ |
| Power dissipation at 25 °C (P_D) | 50 W |
| Thermal resistance junction‑to‑case (Rjc) typical | 2.5 K/W |
All Infineon SPP04N50C3 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current for the SPP04N50C3?
The maximum continuous drain current at 25 °C is 45 A.
What avalanche energy can the transistor handle in a single pulse?
It can withstand up to 130 mJ of avalanche energy per single pulse.
What is the maximum continuous drain current for the SPP04N50C3?
The device can handle a continuous drain current of 45 A at 25 °C.
What is the maximum gate‑source voltage for the transistor?
The maximum gate‑source voltage is 20 V.