Key facts
- Brand
- Infineon
- Model
- BFP740F
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-05
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Infineon BFP740F RF Transistor Datasheet
Datasheet 10 pages · 172 KB · EN
The BFP740F is a silicon‑germanium NPN RF transistor designed for wireless applications such as CDMA and WLAN up to 10 GHz. It offers a low noise figure (0.5 dB at 1.8 GHz) and high maximum stable gain (27.5 dB at 1.8 GHz).
Key specifications include a collector‑emitter voltage of 13 V, collector current of 30 mA, transition frequency of 42 GHz, and a total power dissipation of 160 mW. The device is supplied in a TSFP‑4 surface‑mount package and is rated for junction temperatures up to 150 °C.
Infineon BFP740F specifications
| Collector‑emitter voltage (VCEO) | 13 V |
|---|---|
| Noise figure (F) at 1.8 GHz | 0.5 dB |
| Maximum stable gain (Gms) at 1.8 GHz | 27.5 dB |
| Package type | TSFP‑4 |
All Infineon BFP740F documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the collector‑emitter breakdown voltage?
The collector‑emitter breakdown voltage is 13 V.
What is the noise figure at 1.8 GHz?
The noise figure at 1.8 GHz is 0.5 dB.
What noise figure does the BFP740F achieve at 1.8 GHz?
It achieves a noise figure of 0.5 dB at 1.8 GHz.
What is the maximum stable gain of the BFP740F at 1.8 GHz?
The maximum stable gain is 27.5 dB at 1.8 GHz.