Infineon SPP15P10P Manuals

ManualLib has 4 documents for the Infineon SPP15P10P: 4 datasheets. Every file can be read online or downloaded as a PDF for free.

Datasheet 4

Key facts

Model
SPP15P10P
Industry
Industrial
Documents
4
Languages
EN
Last added
2012-04-05

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Infineon SPP15P10P Datasheet

Infineon SPP15P10P Datasheet

Datasheet 8 pages · 99 KB · EN

This datasheet describes the Infineon SPP15P10P SIPMOS® small‑signal P‑channel transistor, including its maximum ratings, thermal behavior, and dynamic performance. The document is intended for designers who need detailed parameters for circuit integration.

Key specifications include a continuous drain current of –15 A at 25 °C, a power dissipation capability of 128 W, a gate‑source voltage rating of +20 V, and a typical on‑state resistance of 0.24 Ω. Thermal resistance (junction‑case) is 1.17 K/W and the device can withstand an avalanche energy of 230 mJ per pulse.

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Infineon SPP15P10P specifications

Continuous drain current (Id) at 25 °C-15 A
Maximum power dissipation (P_D)128 W
Gate‑source voltage rating (Vgs)+20 V
Drain‑source breakdown voltage (Vds)~100 V
Thermal resistance, junction‑case (RθJC)1.17 K/W
Avalanche energy (Eas) per pulse230 mJ

Source: Infineon SPP15P10P Datasheet

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Questions answered in these manuals

What is the maximum continuous drain current for the SPP15P10P?

The device can conduct a continuous drain current of –15 A at 25 °C.

From: Infineon SPP15P10P Datasheet

How much power can the SPP15P10P dissipate safely?

It is rated for a maximum power dissipation of 128 W.

From: Infineon SPP15P10P Datasheet

What is the maximum continuous drain current for the SPP15P10P?

The device can conduct up to 15 A continuously at 25 °C.

From: Infineon SPP15P10P SIPMOS Small‑Signal Transistor Datasheet

What is the breakdown voltage of the SPP15P10P transistor?

The drain‑source breakdown voltage is approximately 100 V.

From: Infineon SPP15P10P SIPMOS Small‑Signal Transistor Datasheet

What avalanche energy rating does the SPP15P10P have?

The device is rated for an avalanche energy of 230 mJ per single pulse.

From: Infineon SPP15P10P SIPMOS Small‑Signal Transistor Datasheet