Key facts
- Brand
- Infineon
- Model
- BAR64
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-06
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Infineon BAR64 Series Silicon PIN Diode Datasheet
The BAR64 series are silicon PIN diodes designed for RF attenuation and switching applications. They operate from 1 MHz up to 6 GHz, offering very low capacitance (as low as 0.17 pF) and low forward resistance (typ. 2.1 Ω at 10 mA).
The datasheet provides maximum ratings, thermal resistance, DC and AC electrical characteristics, and permissible pulse load limits for the various package variants (e.g., BAR64‑02L, BAR64‑04W). Typical values include a reverse voltage of 150 V, forward current of 100 mA, and junction temperature rating of 150 °C.
Infineon BAR64 specifications
| Reverse voltage (V_R) | 150 V |
|---|---|
| Forward current (I_F) | 100 mA |
| Junction temperature (T_J) | 150 °C |
| Operating temperature range | -55 °C to 125 °C |
| Typical forward voltage at 100 mA | 1.1 V |
| Diode capacitance at 1 MHz (V_E=20 V) | 0.23 pF |
| Diode capacitance at 100 MHz (V_E=0 V) | 0.30 pF |
All Infineon BAR64 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum reverse voltage for BAR64 diodes?
The BAR64 series can withstand a reverse voltage of up to 150 V.
What is the typical forward voltage at 100 mA?
The typical forward voltage is 1.1 V at a forward current of 100 mA.
What is the maximum reverse voltage for BAR64 diodes?
The maximum reverse voltage is 150 V.
What is the typical forward voltage of the BAR64 series at low current?
The typical forward voltage is about 1.1 V.