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- Infineon
- Model
- SPP16N50C3
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- Industrial
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- 4
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- EN
- Last added
- 2012-04-06
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Infineon SPP16N50C3 / SPI16N50C3 / SPA16N50C3 Datasheet
The SPP16N50C3, SPI16N50C3 and SPA16N50C3 are Cool MOS™ power transistors offering 580 V rating, ultra‑low gate charge and high transconductance. They are supplied in several isolated and non‑isolated TO‑220 and TO‑262 packages and are RoHS compliant.
The datasheet provides maximum ratings such as 16 A continuous drain current, 500 V drain‑source voltage, 20 V gate‑source voltage and 160 W power dissipation (25 °C). Thermal characteristics include a junction‑to‑case resistance of 0.78 K/W and detailed transient thermal impedance curves. Electrical parameters like capacitances, on‑state resistance, gate charge and avalanche energy (460 mJ) are also listed.
Infineon SPP16N50C3 specifications
| Gate‑Source voltage (VGS) | +20 V (continuous), +30 V (AC) |
|---|---|
| Power dissipation (PD) | 160 W at 25 °C |
| Avalanche energy (single pulse) | 460 mJ |
Source: Infineon SPP16N50C3 / SPI16N50C3 / SPA16N50C3 Datasheet
All Infineon SPP16N50C3 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the power dissipation capability at 25 °C?
The part can dissipate up to 160 W when mounted on a suitable heatsink at 25 °C.
From: Infineon SPP16N50C3 / SPI16N50C3 / SPA16N50C3 Datasheet
What is the maximum continuous drain current for these MOSFETs?
The maximum continuous drain current is 16 A.
From: Infineon SPP16N50C3 SPB16N50C3 SPI16N50C3 SPA16N50C3 Power Transistor Datasheet
What is the avalanche energy per pulse?
The single‑pulse avalanche energy is specified as 460 mJ.
From: Infineon SPP16N50C3 SPB16N50C3 SPI16N50C3 SPA16N50C3 Power Transistor Datasheet
What is the maximum continuous drain current for these MOSFETs?
The maximum continuous drain current is 16 A.
From: Infineon SPP16N50C3 / SPB16N50C3 / SPI16N50C3 / SPA16N50C3 Power MOSFET Datasheet
What is the breakdown voltage rating?
The devices are rated for a drain‑source breakdown voltage of 500 V.
From: Infineon SPP16N50C3 / SPB16N50C3 / SPI16N50C3 / SPA16N50C3 Power MOSFET Datasheet
How much avalanche energy can a single pulse deliver?
A single avalanche pulse can deliver up to 460 mJ of energy.
From: Infineon SPP16N50C3/SPB16N50C3/SPI16N50C3/SPA16N50C3 Datasheet