Key facts
- Brand
- Fairchild
- Model
- HUF75652G3
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild HUF75652G3 75A 100V N-Channel UltraFET Power MOSFET Datasheet
The document is a technical datasheet for the Fairchild HUF75652G3, a 75A, 100V N-Channel UltraFET Power MOSFET packaged in JEDEC TO-247. It lists absolute maximum ratings, electrical specifications for off-state, on-state, switching, gate charge, and capacitance, as well as source-to-drain diode specifications.
Read onlineFairchild HUF75652G3 specifications
| Drain Current (Continuous) | 75 A |
|---|---|
| Drain to Source Voltage | 100 V |
| Power Dissipation | 515 W |
| Operating and Storage Temperature | -55 to 175 °C |
| Thermal Resistance Junction to Case | 0.29 C/W |
| Drain to Source On Resistance | 0.008 Q |
| Package Type | JEDEC TO-247 |
Source: Fairchild HUF75652G3 75A 100V N-Channel UltraFET Power MOSFET Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
How does the on-resistance change with temperature?
Normalized drain-to-source on-resistance increases as junction temperature rises from -80°C to 200°C.
From: Fairchild HUF75652G3 75A 100V N-Channel UltraFET Power MOSFET Datasheet
What is the maximum power dissipation rating for this component?
The maximum power dissipation is rated at 515 W.
From: Fairchild HUF75652G3 75A N-Channel Power MOSFET Datasheet
What is the maximum temperature for soldering the leads?
The maximum temperature for soldering the leads is 300 °C for 10 seconds.
From: Fairchild HUF75652G3 75A N-Channel Power MOSFET Datasheet