HUF75652G3 75A, 100V, 0.008 Ohm, N-Channel UltraFET® Power MOSFET is a low-resistance power MOSFET from Fairchild Semiconductor Corporation. Product features include ultra low on-resistance - rDS(ON) = 0.008Ω, VGS = 10V, as well as simulation models, absolute maximum ratings, and packaging information.
The document details the HUF75652G3, an N-Channel UltraFET Power MOSFET packaged in JEDEC TO-247. Key features include a low on-resistance of 0.008 Ohms and a continuous drain current rating of 75A at both 25°C and 100°C.
The datasheet covers absolute maximum ratings, electrical specifications for off-state, on-state, switching, gate charge, and capacitance parameters. It also includes typical performance curves such as normalized power dissipation, safe operating area, and temperature-dependent characteristics.
| Thermal Resistance Junction to Case | 0.29 Cw |
|---|
The maximum power dissipation is rated at 515 W.
The maximum temperature for soldering the leads is 300 °C for 10 seconds.