Key facts
- Brand
- Fairchild
- Model
- HUF75545S3S
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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FAIRCHILD HUF75545P3 HUF75545S3 HUF75545S3S Manual
This document is a technical datasheet for the HUF75545 series of N-channel UltraFET Power MOSFETs manufactured by Fairchild Semiconductor. The devices are rated for 75 Amperes continuous drain current, 80 Volts drain-to-source voltage, and feature an ultra-low on-resistance (RDS(ON)) of 0.010 Ohms typical at VGS = 10V.
The datasheet provides comprehensive electrical specifications, including off-state characteristics like breakdown voltage and leakage currents, as well as on-state parameters such as threshold voltage and thermal resistance. It also details switching specifications, gate charge requirements, capacitance values, and source-to-drain diode performance. The document includes typical performance curves illustrating power dissipation, current capability versus temperature, and safe operating areas.
Fairchild HUF75545S3S specifications
| Drain Current (Continuous) | 75 A |
|---|---|
| Drain to Source Voltage | 80 V |
| On-Resistance (Typical) | 0.010 Ohm |
| Power Dissipation | 270 W |
| Operating Temperature Range | -55 to 175 °C |
| Package Types | TO-220AB, TO-263AB |
All Fairchild HUF75545S3S documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum power dissipation rating for this component?
The maximum rated power dissipation is 270 W.
What is the maximum continuous drain current at a case temperature of 25°C?
The maximum continuous drain current is 75 A when the case temperature is 25°C.
What is the maximum power dissipation for this device?
The maximum power dissipation is 270 W.