HUF75652G3 is a N-channel MOSFET produced by Fairchild Semiconductor Corporation. Its characteristic is low on-resistance, maximum voltage is 100V, and maximum current is 75A.
The document is a technical datasheet for the Fairchild HUF75652G3, a 75A, 100V N-Channel UltraFET Power MOSFET packaged in JEDEC TO-247. It lists absolute maximum ratings, electrical specifications for off-state, on-state, switching, gate charge, and capacitance, as well as source-to-drain diode specifications.
| Drain Current (Continuous) | 75 A |
|---|---|
| Drain to Source Voltage | 100 V |
| Power Dissipation | 515 W |
| Operating and Storage Temperature | -55 to 175 °C |
| Thermal Resistance Junction to Case | 0.29 C/W |
| Drain to Source On Resistance | 0.008 Q |
| Package Type | JEDEC TO-247 |
Normalized drain-to-source on-resistance increases as junction temperature rises from -80°C to 200°C.