This file is the datasheet of HUF75545P3, HUF75545S3, HUF75545S3S, introducing the features and characteristics of the products. For details, please refer to the original file.
This document is a technical datasheet for the HUF75545 series of N-channel UltraFET Power MOSFETs manufactured by Fairchild Semiconductor. The devices are rated for 75 Amperes continuous drain current, 80 Volts drain-to-source voltage, and feature an ultra-low on-resistance (RDS(ON)) of 0.010 Ohms typical at VGS = 10V.
The datasheet provides comprehensive electrical specifications, including off-state characteristics like breakdown voltage and leakage currents, as well as on-state parameters such as threshold voltage and thermal resistance. It also details switching specifications, gate charge requirements, capacitance values, and source-to-drain diode performance. The document includes typical performance curves illustrating power dissipation, current capability versus temperature, and safe operating areas.
| Drain Current (Continuous) | 75 A |
|---|---|
| Drain to Source Voltage | 80 V |
| On-Resistance (Typical) | 0.010 Ohm |
| Power Dissipation | 270 W |
| Operating Temperature Range | -55 to 175 °C |
| Package Types | TO-220AB, TO-263AB |
The maximum rated power dissipation is 270 W.