HUF75545P3, HUF75545S3, HUF75545S3S 75A, 80V, 0.010 Ohm, N-Channel, UltraFET® Power MOSFET Features: Ultra Low On-Resistance - rDS(ON) = 0.010Ω, VGS = 10V
This document is a technical datasheet for the Fairchild Semiconductor HUF75545P3, HUF75545S3, and HUF75545S3S N-Channel UltraFET Power MOSFETs. The devices are available in JEDEC TO-220AB and TO-263AB packages and feature an ultra-low on-resistance of 0.010 Ohm with a drain current capability of 75A.
| Drain Current (Continuous) | 75 A |
|---|---|
| On-Resistance | 0.010 Ohm |
| Drain to Source Voltage | 80 V |
| Power Dissipation | 270 W |
| Operating Temperature Range | -55 to 175 °C |
The maximum continuous drain current is 75 A when the case temperature is 25°C.
The maximum power dissipation is 270 W.
The maximum temperature for soldering the leads is 300°C.