Fairchild FQPF47P06 Manuals

This datasheet provides absolute maximum ratings, thermal characteristics, drain-source voltage, drain-source current, gate-source voltage, single pulsed avalanche energy, avalanche current, repetitive avalanche energy, peak diode recovery dv/dt, power dissipation, operating and storage temperature for FQPF47P06.

This PDF document introduces the FQPF47P06 model of P-Channel MOSFET produced by Fairchild Semiconductor Corporation. The product is made using Fairchild's proprietary planar stripe DMOS technology, and it features low on-state resistance, superior switching performance, and high energy pulse tolerance. It is suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

This document introduces the FQPF47P06 P-Channel MOSFET produced by Fairchild. The device utilizes advanced DMOS technology, featuring low on-state resistance, superior switching performance, and the ability to withstand high energy pulses. It is suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.