Key facts
- Brand
- Fairchild
- Model
- FQPF30N06
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
Start here
Fairchild FQPF30N06 N-Channel MOSFET Datasheet
The FQPF30N06 is a 60 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as automotive, DC‑DC converters, and high‑efficiency power management in portable and battery‑operated products.
Key features include a typical on‑resistance of 0.042 Ω at VGS = 10 V, low gate charge (≈19 nC), fast switching, 100 % avalanche tested capability, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package and provides robust thermal performance with a junction‑to‑case resistance of 3.85 °C·W.
Fairchild FQPF30N06 specifications
| Drain‑Source Voltage (VDS) | 60 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 21 A |
| Continuous Drain Current (ID) at 100 °C | 149 A |
| Pulsed Drain Current (ID) (Note 1) | 84 A |
| Gate‑Source Voltage (VGS) | +25 V |
| Power Dissipation (PD) at 25 °C | 39 W |
| Maximum Junction Temperature (TJ) | 175 °C |
| Thermal Resistance, Junction‑to‑Case (RJC) | 3.85 °C/W |
| Thermal Resistance, Junction‑to‑Ambient (RJA) | 62.5 °C/W |
All Fairchild FQPF30N06 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQPF30N06?
The device is rated for a maximum drain‑source voltage of 60 V.
What are the continuous and pulsed drain current ratings?
Continuous drain current is 21 A at 25 °C (149 A at 100 °C) and pulsed drain current is 84 A.