This datasheet provides absolute maximum ratings, thermal characteristics, drain-source voltage, drain-source current, gate-source voltage, single pulsed avalanche energy, avalanche current, repetitive avalanche energy, peak diode recovery dv/dt, power dissipation, operating and storage temperature for FQPF47P06.
This document provides detailed technical information for the Fairchild FQPF47P06, a 60V P-Channel MOSFET produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance, making it suitable for low voltage applications such as automotive systems, DC/DC converters, and power management in portable products.
The datasheet includes absolute maximum ratings, electrical characteristics (off and on states), dynamic parameters like capacitance and switching times, and typical characteristic curves. It also details the package dimensions for the TO-220F case and outlines Fairchild's trademarks and product status definitions.
| Drain-Source Voltage | -60 V |
|---|---|
| Continuous Drain Current (25°C) | -30 A |
| Pulsed Drain Current | -120 A |
| Static On-Resistance | 0.026 Ω @ VGS = -10 V |
| Total Gate Charge (Typical) | 84 nC |
| Reverse Transfer Capacitance | 320 pF |
| Maximum Junction Temperature | +175 °C |
| Package Type | TO-220F |
The maximum junction temperature rating is 175°C.
Yes, the devices are well suited for low voltage applications such as automotive systems.