This PDF document introduces the FQPF47P06 model of P-Channel MOSFET produced by Fairchild Semiconductor Corporation. The product is made using Fairchild's proprietary planar stripe DMOS technology, and it features low on-state resistance, superior switching performance, and high energy pulse tolerance. It is suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
The FQPF47P06 is a P‑Channel enhancement mode power MOSFET designed for low‑voltage applications such as automotive DC/DC converters and portable power management. It features low gate charge, low output capacitance, and high avalanche capability, making it suitable for fast switching and high‑efficiency designs.
The datasheet provides absolute maximum ratings, thermal characteristics, typical electrical performance curves, and mechanical dimensions for the TO‑220F package. Key parameters include a -60 V drain‑source rating, -30 A continuous drain current, 62 W power dissipation at 25 °C, and a junction temperature range up to 175 °C.
| Drain-Source Voltage (Vds) | -60 V |
|---|---|
| Continuous Drain Current (Id) at 25°C | -30 A |
| Power Dissipation (Pd) at 25°C | 62 W |
| Thermal Resistance, Junction-to-Case (Rjc) | 2.42 °C·W |
| Thermal Resistance, Junction-to-Ambient (Rja) | 62.5 °C·W |
| Operating Temperature Range | -55 to +175 °C |
| Typical Gate Charge | 84 nC |
The maximum continuous drain current at 25 °C is -30 A.
The device can dissipate up to 62 W at a case temperature of 25 °C.
The MOSFET is rated for a maximum junction temperature of 175 °C.
The FQPF47P06 is supplied in a TO‑220F package.