Key facts
- Brand
- Fairchild
- Model
- FQPF13N50
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild Semiconductor FQP13N50/FQPF13N50 500V N-Channel MOSFET Datasheet
This document is a datasheet for the Fairchild Semiconductor FQP13N50 and FQPF13N50 N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe DMOS technology designed to minimize on-state resistance and provide superior switching performance for applications such as switch mode power supplies and electronic lamp ballasts.
Read onlineFairchild FQPF13N50 specifications
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 12.5 A |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-220 |
Source: Fairchild Semiconductor FQP13N50/FQPF13N50 500V N-Channel MOSFET Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain-source voltage rating for this device?
The device has a maximum drain-source voltage rating of 500 V.
From: Fairchild Semiconductor FQP13N50/FQPF13N50 500V N-Channel MOSFET Datasheet
What is the maximum junction temperature for operation?
The maximum operating and storage temperature range extends up to +150°C.
From: Fairchild Semiconductor FQP13N50/FQPF13N50 500V N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage for the FQP13N50?
The FQP13N50 is rated for a maximum drain‑source voltage of 500 V.
What is the typical gate charge of these MOSFETs?
Both devices have a typical gate charge of about 45 nC.